| PART |
Description |
Maker |
| ZC831 ZC831A ZC831B ZC830 ZC830A ZC830B ZC836B ZC8 |
SOT23 SILICON VARIABLE CAPACITANCE DIODES
25 Volt hyperabrupt varactor diode
MS (MIL-C-5015)/97 SERIES 3108A SOLID SHELL ANGLE PLUGS, RIGHT ANGLE BODY STYLE, SOLDER TERMINATION, 22 SHELL SIZE, 22-2 INSERT ARRANGEMENT, PLUG GENDER, 3 CONTACTS 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
DIODES INC
|
| BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
VHF variable capacitance double diodes 甚高频双可变电容二极
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Leshan Radio Company, Ltd.
ONSEMI[ON Semiconductor]
|
| BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| BB142 BB142115 |
4.6 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| RKV606KP |
3.34 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| 1N4795A 1N4811A 1N4811B 1N4815 1N4797B |
39 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
56 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
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